Silicon (Si) based optical connection is an attractive solution for next generation high-speed data transmission and can be used to satisfy the desire for low cost, low power consumption, and high bandwidth. Si photonics integrated circuits have been used for both intra or inter chip links, and long-haul telecom links. For these implementations, broadband electro optic modulators are critical devices for encoding light by either intensity or phase modulation. The carrier depletion-based Si Mach-Zehnder modulator (MZM) is a promising device that has direct matching with CMOS or bipolar CMOS technology. This kind of modulator use phase shifters as PN diodes placed in the middle or around the waveguide rib to modulate the light by utilizing the free carrier dispersion effect. The numerical optimizations of Si PIN-PS based on forwarding biased PIN diode using a commercial 220 nm SOI rib waveguide technology has been reported. This study shows how to design a PS that can fulfill the high-speed MZM conditions with a very low optical and electrical energy consumption. The optimal parameters of the PS design are rib waveguide width is 500 nm, etching depth and slab thickness are 110 nm, the distance between the rib waveguide core to the doping areas is 2 µm, and the holes and electrons doping concentration are 1017 cm-3. Results show that the optimal PS can obtain a phase shift of π using a forward biasing of 1.629 v with a very low loss of 28.985 dB/cm using a short length of 0.5mm.
What will audience learn from your presentation?
- How to design high-Speed PIN phase-shifter.
- It will help to people which are dealing with silicon photonics field