An optimal configuration of vortex domain wall pinning in constricted magnetic nanowires for storage memory devices

Title : An optimal configuration of vortex domain wall pinning in constricted magnetic nanowires for storage memory devices

Abstract:

Racetrack memory is the one technology based on magnetic domain wall (DW) motion in nanowires with the potential of application advantages such as fast access to the stored information, high storage capacities and low power consumption. Therefore, a series of remarkable studies have been devoted to manipulating and control static and dynamic DWs in ferromagnetic devices such as nanowires and nanostrips. This study aims to investigate the Vortex domain wall dynamics and its pinning through the stepped magnetic nanowire by using spin-transfer torque. Controlling Vortex Domain wall (VDW) dynamics and stability in a nanowire is a crucial issue for DW storage memory. In this study, VDW pinning was investigated by using micromagnetic simulation. A new way is proposed for VDW pinning by creating a stepped notch. This way is a convenient way to pin DW with different structures. A stepped area is constricted at the center of the nanowire with proportions of depth (d)) and length (l) to pin the magnetic domain wall (DW) with high barrier potential energy to achieve a high information storage capacity. It is found that the VDW stability structure and pinning at the stepped area depends on the magnetic material properties and the stepped area geometries. From this study, it can be concluded that the stability type of the VDW with CW chirality and up polarity during its propagation in stepped nanowire could be controlled by improving the magnetic properties like saturation magnetization (Ms), decreasing the current density and manipulating the stepped area dimensions (d)) and (l).

Audience Take Away Notes: 

• Use the simulation in their work based on the experimental work
• In the future, this work will help to develop storage memory with high storage density, low power consumption and non-volatility

Biography:

Mohammed Al Bahri, is presently working as an associate professor in Physics at A'Sharqiyah University in Oman. He has worked in the Ministry of Education in Oman for around 20 years in Monitoring and evaluating student learning. He got his Ph.D. degree from Sultan Qaboos University in Oman in 2018. He is working as a researcher in nanoscience magnetic materials, especially magnetic nanowires and magnetic domain walls. He has 16 papers published in various Web of Science journals 164 citations in Google Scholar. He had been awarded the best presenter at International Conference on Magnetism and Magnetic Materials(ICMMM 2020), Spain, Barcelona, 17-18 August 2020. He had been assigned different responsibilities in his current institution, like a chair of the learning and teaching committee, the chair of the community service committee, and a member of different committees.