Regarding the adjustment of fermi-dirac distribution function in nanostructured materials

A novel electron dispersion rule is used as the foundation for an attempt to investigate the Fermi-Dirac distribution function in degenerate semiconductors generating band tails ( ). With n-GaAs as an example, it seems that the carrier concentration has a greater effect on (the well Fermi-Dirac function) and in the case of than , and for larger values of , is more efficient than . At first having a zero value for a fixed value of the impurity screening potential, the relative change in the Fermi-Dirac function with respect to (( ), ) decreases as the electron energy, , increases. Afterwards, the exhibits the minimal value and climbs with rising at a rather modest rate. As values increase, approaches . We can better explore the transport characteristics of degenerate semiconductors reliant on the Boltzmann transport equation using this formulation, which should also better correspond with experimental results.