Muhammad Awais Altaf

Title : Influence of Si on crystal structures, mechanical properties, and thermal stability of high-entropy carbide system (HfC, TaC, TiC, VC, ZrC)/(Hf, Ta, Ti, V, Zr)C

Abstract:

High-entropy carbide (HfC, TaC, TiC, VC, ZrC)/(Hf, Ta, Ti, V, Zr)C thin films with Si addition were developed at 450 oC by magnetron sputtering. XRD results showed that all coatings have single phase face-centered cubic (fcc) structure (Fm-3m, space group number 225). With the addition of Si, hardness and elastic modulus could be increased from 30 GPa to 36 GPa and 397 GPa to 427 GPa, respectively. In addition, Si increased the film thickness indicated by SEM secondary electron images. Si also affected on the thermal stability of high entropy carbide thin films. Si reduced the mass loss for reactive carbide powders while onset shifted to high temperature in case of non-reactive powders. In summary, this study explained the influence of Si on crystal structures, mechanical properties, and thermal stability of high-entropy carbide system (HfC, TaC, TiC, VC, ZrC)/(Hf, Ta, Ti, V, Zr)C.

Biography:

Muhammad Awais Altaf is doing PhD at E308 Institute of Materials Science and Technology, TU Wien, Austria since March 2022. His PhD research topic is Study of the development of high-entropy carbide thin films through magnetron sputtering. He completed MSc. Metallurgical and Materials Engineering from University of Engineering and Technology, Lahore, Pakistan in 2018.